Wire Bonding Semiconductor Wire Bonding Level Description Introduction:  Machine automation frequently involves measuring small distances extremely accurately. Wire Bonding is one such application with some challenging requirements. A ‘normal’ wire bond consists of gold wire bonded to a substrate (PC Board) and an integrated circuit. Wire size varies between eighteen and fifty microns, with twenty-five microns being the ‘standard’; pad sizes are typically between seventy-five and one hundred microns wide. Space between two pads is generally one hundred microns. The width of the actual bond is generally 1.2 to 2.5 times [...]

GaAs Substrate Thickness Measurement Semiconductor Gaas Substrate Thickness Measurement Thickness Description Measuring Thickness of Wafers with Different Chemistries Introduction:  Silicon wafers are ordinarily highly conductive and easy to measure with standard capacitive displacement sensors (See MTI's Proforma 300i). Measuring the thickness of GaAs wafers that have high bulk resistivity (>10k Ohm/cm) is a little more difficult because the wafers act as non-conductive insulators in a capacitive sensor's measuring field. Fortunately, MTI has a solution to this problem. Solution:  It’s possible to measure the thickness and TTV of high resistivity semiconducting [...]